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Feb 2003
AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Features
VDS (V) = 20V ID = 5A RDS(ON) < 50m (VGS = 4.5V) RDS(ON) < 65m (VGS = 2.5V) RDS(ON) < 90m (VGS = 1.8V)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 20 8 5 4.2 20 2 1.28 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 56 81 40
Max 62.5 110 48
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO9926
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=4.5V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=4A VGS=1.8V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 15 40 56 54 72 11 0.76 1 2 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 66 44 3 5.54 VGS=4.5V, VDS=10V, ID=5A 1.26 0.52 5 VGS=5V, VDS=10V, RL=2, RGEN=6 IF=5A, dI/dt=100A/s 7 29 6.2 13.7 3.8 50 70 65 90 0.6 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO9926
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 8V 4.5V 12 3.5V
BVDSS IDSS
ID (A) 15
I Drain-Source BreakdowD=250A, VGS=0V 3V VDS=16V, VGS=0V
2V
10
20
VDS=5V
V 1 5 A nA V A
Zero Gate Voltage 2.5V Drain Current
TJ=55C 8
25C ID(A) 6
IGSS
Gate-Body leakage curVDS=0V, VGS=8V Gate Threshold Voltag VDS=VGS ID=250A On state drain current VGS=4.5V, VDS=5V
GS VGS=4.5V, ID=5A
125C
100 1 50 70 63 87
VGS(th) 10 ID(ON)
0.4 15
0.6 41 58 52 67 11
V =1.5V
4
RDS(ON)
5
Static Drain-Source On-Resistance
TJ=125C VGS=2.5V, ID=4A VGS=1.8V, ID=3A
2
m m m
2.4 2.8
gFS VSD
0 0
Forward Transconduct VDS=5V, ID=5A
1 2 3 4
0 5 0.4 0.8 1.2
Diode Forward VoltageIS=1A,VGS=0V VDS (Volts) Maximum Body-Diode Continuous Current IS Fig 1: On-Region Characteristics DYNAMIC PARAMETERS Ciss 100 Input Capacitance 1.8 Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz Reverse Transfer Capa
Normalized On-Resistance 1.6
0.76 1 VGS(Volts) Figure 2: Transfer Characteristics 2 436 66 44
VGS=2.5V, 4A
1.6
2
S A
V
pF pF pF nC nC
VGS=4.5V, 5A nC VGS=1.8V, 2A
Crss
RDS(ON) (m)
80 Gate resistance VGS=1.8V GS=0V, VDS=0V, f=1MHz Rg V SWITCHING PARAMETERS 1.4 Qg Total Gate Charge VGS=2.5V 60 Gate Source Charge VGS=4.5V, VDS=10V, ID=5A Qgs
3
6.2 1.6 0.5 5.5 6.3 40 12.7
0 25 50
Qgd tr
Gate Drain Charge Turn-On DelayTime
40
1.2
tD(on) tD(off) tf trr Qrr
20
Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=5V, VDS=10V, RL=2, 1 RGEN=6
0.8
VGS=4.5V
ns ns ns ns ns 175
Diode Reverse RIF=5A, dI/dt=100A/s 0 Body 2 4 6 8 10 12 Body Diode Reverse RIF=5A, dI/dt=100A/s I (A)
D
12.3 100 75
125
150
Figure 3: On-Resistance vs. Drain Current and Gate Voltage
3.5 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+01 1.0E+00
nC
100 90 80 RDS(ON) (m) 70 60 50 40 30 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=5A
125C
1.0E-01 IS (A) 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C
Alpha & Omega Semiconductor, Ltd.
AO9926
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 1800 VDS=10V ID=5A
BVDSS IDSS IGSS
VGS (Volts)
4
I Drain-Source BreakdowD=250A, VGS=0V
Capacitance (pF)
1600 1400 1200 TJ=55C 1000 800 600
20 1
Ciss
V 5 A nA V A
Crss 41
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
3
Gate-Body leakage curVDS=0V, VGS=8V Gate Threshold Voltag VDS=VGS ID=250A On state drain current VGS=4.5V, VDS=5V VGS=4.5V, ID=5A Static Drain-Source On-Resistance
100 1 50 70 63 87
15
VGS(th) ID(ON) 2
1 RDS(ON) 0
0.4
Coss
0.6
15 58 52 67 11 10 0.76 (Volts) VDS
TJ=125C 400 VGS=2.5V, ID=4A VGS=1.8V, ID=3A
200 0 0 5
m m m S20 V A pF
V 0 Forward Transconduct4 DS=5V, ID=5A 1 2 3 5 6 7 VSD Diode Forward VoltageIS=1A,VGS=0V Qg (nC) Figure Body-Diode Characteristics Maximum7: Gate-Charge Continuous Current IS DYNAMIC PARAMETERS Ciss Input Capacitance 100.0 Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 20 Crss Reverse Transfer Capa Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 15 R SWITCHINGDS(ON) PARAMETERS1ms 100s 10s 10.0 limited Qg Total Gate Charge 10ms Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=5A 10
ID (Amps)
Power (W)
gFS
1
Figure 8: Capacitance Characteristics 2
436 66 44 3 6.2 1.6 0.5 5.5
T J(Max)=150C T A=25C
pF pF nC nC nC ns ns ns ns
Qgd tr
Gate Drain Charge
0.1s
tD(on) 1.0 tD(off) tf trr Qrr
0.1
Turn-On DelayTime 1s
T J(Max)=150C Turn-On Rise Time
A Turn-Off DelayTime
T =25C
V 10sGS=5V,
DC
VDS=10V, RL=2, RGEN=6
5
6.3 40 12.7
0.01 0.1 12.3 1 10 Pulse Width (s) 3.5 100
Turn-Off Fall Time
I =5A, dI/dt=100A/s 0.1Body Diode Reverse R F 10 1 100 VDS (Volts) Body Diode Reverse RIF=5A, dI/dt=100A/s
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0 0.001
ns 1000 nC
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD T on Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
LOGO 9 9 2 6 FAYWLC
NOTE: LOGO 9926 F A Y W LC
- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO9926
CODE 9926
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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